TN3440A Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

TN3440A
Discrete POWER & Signal
Technologies
C
BE
TO-226
NPN General Purpose Amplifier
This device is designed for use in horizontal driver, class A off-line
amplifier and off-line switching applications. Sourced from Process 36.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
V_CEO
VCBO
V_EBO
IC
T_J, T_stg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
250
300
7.0
100
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
Rθ_JC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
TN3440A
1.0
8.0
125
50
Units
V
V
V
mA
°C
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation