TIS75 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – N-Channel General Purpose Amplifier

TIS75
N-Channel General Purpose Amplifier
• This device is designed for low level analog switching, sample and
hold circuits and chopper stabilized amplifiers.
• Sourced from process 54.
1
TO-92
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings * T_a=25°C unless otherwise noted
Symbol
Parameter
Value
V_DG
Drain-Gate Voltage
30
V_GS
Gate-Source Voltage
-30
I_GF
Forward Gate Current
10
T_J, T_STG
Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
mA
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)GSS
I_GSS
Gate-Source Breakdown Voltage
Gate Reverse Current
I_D(off)
Drain Cutoff Leakage Current
V_GS(off) Gate-Source Cutoff Voltage
On Characteristics *
I_G = 1.0µA, V_DS = 0
V_GS = 15V, V_DS = 0
V_GS = 15V, V_DS = 0, T_a = 100°C
V_DS = 15V, V_GS = -10V
V_DS = 15V, V_GS = -10V,
T_a = 100°C
V_DS = 20V, I_D = 4.0nA
I_DSS
Zero-Gate Voltage Drain Current *
r_DS(on)
Drain-Source On Resistance
Small Signal Characteristics
V_DS = 15V, V_GS = 0
V_DS ≤ 0.1V, V_GS = 0
C_iss
Input Capacitance
C_rss
Reverse Transfer Capacitance
Switching Characteristics
V_DS = 0, V_GS = -10V, f = 1.0MHz
V_DS = 0, V_GS = -10V, f = 1.0MHz
t_r
Rise Time
t_on
Turn-On Time
t_off
Turn-Off Time
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 3.0%
V_GS(off) = -4.0V, V_GS(on) = 0,
I_D = 5.0mA, V_DS = 10V
Min. Typ. Max. Units
-30
V
-2.0
nA
-5.0
µA
-2.0
nA
-5.0
µA
-0.8
-4.0
V
8
80
mA
60
Ω
18
pF
8.0
pF
10
ns
10
ns
100
ns
©2004 Fairchild Semiconductor Corporation
Rev. A, June 2004