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| TIP41 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,40-100V,65W) | |||
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TIP41 Series(TIP41/41A/41B/41C)
Medium Power Linear Switching Applications
⢠Complement to TIP42/42A/42B/42C
1
TO-220
NPN Epitaxial Silicon Transistor
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
Parameter
Collector-Emitter Voltage: TIP41
: TIP41A
: TIP41B
: TIP41C
Collector-Emitter Voltage: TIP41
: TIP41A
: TIP41B
: TIP41C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
40
60
80
100
40
60
80
100
5
6
10
2
65
2
150
- 65 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICEO
ICES
IEBO
hFE
Parameter
* Collector-Emitter Sustaining Voltage
: TIP41
: TIP41A
: TIP41B
: TIP41C
Collector Cut-off Current
: TIP41/41A
: TIP41B/41C
Collector Cut-off Current
: TIP41
: TIP41A
: TIP41B
: TIP41C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
Test Condition
IC = 30mA, IB = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VCE = 40V, VEB = 0
VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
VEB = 5V, IC = 0
VCE = 4V,IC = 0.3A
VCE = 4V, IC = 3A
IC = 6A, IB = 600mA
VCE = 4V, IC = 6A
VCE = 10V, IC = 500mA
Min.
40
60
80
100
30
15
3.0
©2000 Fairchild Semiconductor International
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
V
V
0.7 mA
0.7 mA
400 µA
400 µA
400 µA
400 µA
1
mA
75
1.5
V
2.0
V
MHz
Rev. A, February 2000
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