 English |
|
|
|
|
|
|
|
| TIP32 Datasheet, PDF (1/4 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS | |||
| |||
|
TIP32 Series(TIP32/32A/32B/32C)
Medium Power Linear Switching Applications
⢠Complement to TIP31/31A/31B/31C
1
TO-220
PNP Epitaxial Silicon Transistor
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
Parameter
Collector-Base Voltage
: TIP32
: TIP32A
: TIP32B
: TIP32C
Collector-Emitter Voltage : TIP32
: TIP32A
: TIP32B
: TIP32C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
- 40
- 60
- 80
- 100
- 40
- 60
- 80
-100
-5
-3
-5
-3
40
2
150
- 65 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
ICEO
ICES
IEBO
hFE
Parameter
* Collector-Emitter Sustaining Voltage
: TIP32
: TIP32A
: TIP32B
: TIP32C
Collector Cut-off Current
: TIP32/32A
: TIP32B/32C
Collector Cut-off Current
: TIP32
: TIP32A
: TIP32B
: TIP32C
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
Test Condition
IC = - 30mA, IB = 0
VCE = - 30V, IB = 0
VCE = - 60V, IB = 0
VCE = - 40V, VEB = 0
VCE = - 60V, VEB = 0
VCE = - 80V, VEB = 0
VCE = - 100V, VCE = 0
VEB = - 5V, IC = 0
VCE = - 4V, IC = - 1A
VCE = - 4V, IC = - 3A
IC = - 3A, IB = - 375mA
VCE = - 4V, IC = - 3A
VCE = - 10V, IC = - 500mA
Min.
-40
-60
-80
-100
25
10
3.0
©2000 Fairchild Semiconductor International
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
V
V
- 0.3 mA
- 0.3 mA
- 200 µA
- 200 µA
- 200 µA
- 200 µA
- 1 mA
50
- 1.2
- 1.8
V
V
MHz
Rev. A, February 2000
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese