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| TIP29 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.0A,40-100V,30W) | |||
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TIP29 Series(TIP29/29A/29B/29C)
Medium Power Linear Switching Applications
⢠Complementary to TIP30/30A/30B/30C
NPN Epitaxial Silicon Transistor
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Parameter
Collector-Base Voltage
: TIP29
: TIP29A
: TIP29B
: TIP29C
Collector-Emitter Voltage : TIP29
: TIP29A
: TIP29B
: TIP29C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
*Collector-Emitter Sustaining Voltage
: TIP29
: TIP29A
: TIP29B
: TIP29C
Test Condition
IC = 30mA, IB = 0
ICEO
ICES
IEBO
hFE
Collector Cut-off Current
: TIP29/29A
: TIP29B/29C
Collector Cut-off Current
: TIP29
: TIP29A
: TIP29B
: TIP29C
Emitter Cut-off Current
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE(sat)
*Base-Emitter Saturation Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VCE = 40V, VEB = 0
VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
VEB = 5V, IC = 0
VCE = 4V, IC = 0.2A
VCE = 4V, IC = 1A
IC = 1A, IB = 125mA
VCE = 4V, IC = 1A
VCE = 10V, IC = 200mA
Value
40
60
80
100
40
60
80
100
5
1
3
0.4
30
2
150
- 65 ~ 150
Min.
40
60
80
100
40
15
3.0
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
V
V
0.3 mA
0.3 mA
200 µA
200 µA
200 µA
200 µA
1.0 mA
75
0.7
V
1.3
V
MHz
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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