TIP100_08 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Darlington Transistor

TIP100/TIP101/TIP102
NPN Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : h_FE=1000 @ V_CE=4V, I_C=3A (Min.)
• Collector-Emitter Sustaining Voltage
• Low Collector-Emitter Saturation Voltage
• Industrial Use
• Complementary to TIP105/106/107
Equivalent Circuit
C
B
1
TO-220
1.Base 2.Collector 3.Emitter
R1
R1 @ 10kW
R2 @ 0.6kW
R2
E
October 2008
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Parameter
Collector-Base Voltage : TIP100
: TIP101
: TIP102
Collector-Emitter Voltage : TIP100
: TIP101
: TIP102
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T_a=25°C)
Collector Dissipation (T_C=25°C)
Junction Temperature
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
60
80
100
60
80
100
5
8
15
1
2
80
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
© 2007 Fairchild Semiconductor Corporation
TIP100/TIP101/TIP102 Rev. 1.0.0
1
www.fairchildsemi.com