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SSW4N60B Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET | |||
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November 2001
SSW4N60B / SSI4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchildâs proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
⢠4.0A, 600V, RDS(on) = 2.5⦠@VGS = 10 V
⢠Low gate charge ( typical 22 nC)
⢠Low Crss ( typical 14 pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
D
GS
D2-PAK
SSW Series
GDS
I2-PAK
SSI Series
G!
D
!
!
#"
!
!
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8! from case for 5 seconds
SSW4N60B / SSI4N60B
600
4.0
2.5
16
± 30
240
4.0
10
5.5
3.13
100
0.8
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient *
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ
Max
Units
--
1.25
°C/W
--
40
°C/W
--
62.5
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
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