SSRU1N60A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
SSR/U1N60A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ V_DS = 600V
Low R_DS(ON) : 9.390 Ω (Typ.)
BV_DSS = 600 V
R_DS(on) = 12 Ω
I_D = 0.9 A
D-PAK I-PAK
2
1
1
3
2
3
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25 ^oC )
Continuous Drain Current (T_C=100 ^oC)
Drain Current-Pulsed
O¹
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O²
Avalanche Current
O¹
Repetitive Avalanche Energy
O¹
Peak Diode Recovery dv/dt
O³
Total Power Dissipation (T_A=25^oC )*
Total Power Dissipation (T_C=25 ^oC )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
600
0.9
0.57
3
+_{_ 30}
66
0.9
2.8
3.0
2.5
28
0.22
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ ^oC
o_C
Thermal Resistance
Symbol
Characteristic
Typ.
R _θJC
R _θJA
R _θJA
Junction-to-Case
--
Junction-to-Ambient *
--
Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
4.53
50
110
Units
o_{C /W}
Rev. B
©1999 Fairchild Semiconductor Corporation