SSP4N80AS Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Avalanche Rugged Technology

S
Advanced Power MOSFET
SSP4N80AS
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ V _DS = 800V
Low R_DS(ON) : 2.450 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T _C=25 ^ΟC)
Continuous Drain Current (T _C=100 ^ΟC)
Drain Current-Pulsed
O¹
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O²
Avalanche Current
O¹
Repetitive Avalanche Energy
O¹
Peak Diode Recovery dv/dt
O³
Total Power Dissipation (T _C=25 ^ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BV_DSS = 800 V
R_DS(on) = 3.0 Ω
I_D = 4.5 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
800
4.5
2.8
18
324
4.5
13
2.0
130
1.04
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/^ΟC
Ο_C
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.96
--
62.5
Units
Ο_{C /W}
©1999 Fairchild Semiconductor Corporation
Rev. B