SSP4N60AS Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
SSP4N60AS
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µ A (Max.) @ V_DS = 600V
Lower R_DS(ON) : 2.037 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25^oC)
Continuous Drain Current (T_C=100^oC)
Drain Current-Pulsed
O¹
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O²
Avalanche Current
O¹
Repetitive Avalanche Energy
O¹
Peak Diode Recovery dv/dt
O³
Total Power Dissipation (T_C=25 ^oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Thermal Resistance
Symbol
R _θJC
R _θCS
R _θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BV_DSS = 600 V
R_DS(on) = 2.5 Ω
I_D = 4 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
600
4
2.5
16
+_{_ 30}
262
4
10
3.0
100
0.8
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/^oC
o_C
Typ.
--
0.5
--
Max.
1.25
--
62.5
Units
o_C/W
Rev. B
©1999 Fairchild Semiconductor Corporation