SSN1N45BTA Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel B-FET 450 V, 0.5 A, 4.25 Ω

SSN1N45B
N-Channel B-FET
450 V, 0.5 A, 4.25 Ω
November 2013
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand
high energy pulse in the avalanche and commutation
mode. These devices are well suited for electronic ballasts
based on half bridge configuration.
Features
• 0.5 A, 450 V, R_DS(on) = 4.25 Ω @ V_GS = 10 V
• Low Gate Charge (typical 6.5 nC)
• Low Crss (typical 6.5 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• Gate-Source Voltage ± 50V Guaranteed
D
G
GDS
TO-92
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_stg
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_A = 25°C)
Power Dissipation (T_L = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
R_θJL
R_θJA
Parameter
Thermal Resistance, Junction-to-Lead, Max.
Thermal Resistance, Junction-to-Ambient, Max.
(Note 5a)
(Note 5b)
S
SSN1N45BTA
450
0.5
0.32
4.0
± 50
108
0.5
0.25
5.5
0.9
2.5
0.02
-55 to +150
300
SSN1N45BTA
50
140
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
1
SSN1N45B Rev. C0
www.fairchildsemi.com