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SSH7N90A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-CHANNEL POWER MOSFET | |||
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N-CHANNEL POWER MOSFET
FEATURES
⢠Avalanche Rugged Technology
⢠Rugged Gate Oxide Technology
⢠Lower Input Capacitance
⢠Improved Gate Charge
⢠Extended Safe Operating Area
⢠Lower Leakage Current: 25µA (Max.) @ VDS = 900V
⢠Lower RDS(ON): 1.247⦠(Typ.)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (TC = 25°C)
Continuous Drain Current (TC = 100°C)
Drain Current-Pulsed
x
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
y
Avalanche Current
x
Repetitive Avalanche Energy
x
Peak Diode Recovery dv/dt
z
Total Power Dissipation (TC = 25°C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8â from case for 5-seconds
THERMAL RESISTANCE
Symbol
RθJC
RθCS
RθJA
Characteristics
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
SSH7N90A
BVDSS = 900V
RDS(ON) = 1.8â¦
ID = 7A
TO-3P
1
2
3
1. Gate 2. Drain 3. Source
Value
900
7
4.4
28
±30
778
7
24
1.5
240
1.92
â55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
â
0.24
â
Max.
0.52
â
40
Units
°C/W
 1999 Fairchild Semiconductor Corporation
REV. B
1
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