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SSH70N10A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET | |||
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Advanced Power MOSFET
SSH70N10A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175ÎC Operating Temperature
Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.018 ⦠(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ÎC)
Continuous Drain Current (TC=100 ÎC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
O1
Peak Diode Recovery dv/dt
O3
Total Power Dissipation (TC=25 ÎC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8â from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.023 â¦
ID = 70 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Value
100
70
49.2
280
+_ 20
1633
70
30
6.5
300
2.0
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ÎC
ÎC
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.5
--
40
Units
ÎC /W
Rev. B
©1999 Fairchild Semiconductor Corporation
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