SSH10N90A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET
FEATURES
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Lower Input Capacitance
• Improved Gate Charge
• Extended Safe Operating Area
• Lower Leakage Current: 25µA (Max.) @ V_DS = 900V
• Lower R_DS(ON): 0.938Ω (Typ.)
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (T_C = 25°C)
Continuous Drain Current (T_C = 100°C)
Drain Current-Pulsed
x
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
y
Avalanche Current
x
Repetitive Avalanche Energy
x
Peak Diode Recovery dv/dt
z
Total Power Dissipation (T_C = 25°C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
THERMAL RESISTANCE
Symbol
R_θJC
R_θCS
R_θJA
Characteristics
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
SSH10N90A
BV_DSS = 900V
R_DS(ON) = 1.2Ω
I_D = 10A
TO-3P
1
2
3
1. Gate 2. Drain 3. Source
Value
900
10
6.3
40
±30
794
10
28
1.5
280
2.22
−55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
−
0.24
−
Max.
0.45
−
40
Units
°C/W
 1999 Fairchild Semiconductor Corporation
REV. B
1