SSH10N60A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
SSH10N60A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ V_DS = 600V
Low R_DS(ON) : 0.646 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25^oC )
Continuous Drain Current (T_C=100^oC )
Drain Current-Pulsed
O¹
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O²
Avalanche Current
O¹
Repetitive Avalanche Energy
O¹
Peak Diode Recovery dv/dt
O³
Total Power Dissipation (T_C=25^oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “from case for 5-seconds
BV_DSS = 600 V
R_DS(on) = 0.8 Ω
I_D = 10 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Value
600
10
6.3
40
+_{_ 30}
545
10
19.3
3.0
193
1.54
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ^oC
o_C
Thermal Resistance
Symbol
R _θJC
R _θCS
R _θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
0.65
--
40
Units
o_{C /W}
Rev. B
©1999 Fairchild Semiconductor Corporation