SSF8N80A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
SSF8N80A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ V_DS = 800V
Low R_DS(ON) : 1.000 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25 ^ΟC)
Continuous Drain Current (T_C=100 ^ΟC)
Drain Current-Pulsed
O¹
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O²
Avalanche Current
O¹
Repetitive Avalanche Energy
O¹
Peak Diode Recovery dv/dt
O³
Total Power Dissipation (T_C=25 ^ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
BV_DSS = 800 V
R_DS(on) = 1.5 Ω
I_D = 5.5 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Value
800
5.5
3.5
32
+_{_ 30}
436
5.5
9.5
2.0
95
0.76
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/^ΟC
Ο_C
Thermal Resistance
Symbol
R _θJC
R _θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
1.32
40
Units
Ο_C/W
©1999 Fairchild Semiconductor Corporation
Rev. B