SS8050BBU Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

SS8050
NPN Epitaxial Silicon Transistor
July 2010
Features
• 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: I_C=1.5A
• Collector Power Dissipation: P_C=2W (T_C=25°C)
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
40
25
6
1.5
1
150
-65 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Conditions
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_{CE (sat)}
V_{BE (sat)}
V_{BE (on)}
C_ob
f_T
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Product
I_C=100µA, I_E=0
I_C=2mA, I_B=0
I_E=100µA, I_C=0
V_CB=35V, I_E=0
V_EB=6V, I_C=0
V_CE=1V, I_C=5mA
V_CE=1V, I_C=100mA
V_CE=1V, I_C=800mA
I_C=800mA, I_B=80mA
I_C=800mA, I_B=80mA
V_CE=1V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
V_CE=10V, I_C=50mA
Min.
40
25
6
45
85
40
100
Typ.
9.0
Max.
100
100
300
0.5
1.2
1
Units
V
V
V
nA
nA
V
V
V
pF
MHz
h_FE Classification
Classification
h_FE2
B
85 ~ 160
C
120 ~ 200
D
160 ~ 300
© 2010 Fairchild Semiconductor Corporation
SS8050 Rev. B3
1
www.fairchildsemi.com