SS8050 Datasheet, PDF (1/4 Pages) Wing Shing Computer Components – TRANSISTOR (NPN)

SS8050
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: I_C=1.5A
• Collector Power Dissipation: P_C=2W (T_C=25°C)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
40
25
6
1.5
1
150
-65 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE (sat)
V_BE (sat)
V_BE (on)
C_ob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
I_C=100µA, I_E=0
I_C=2mA, I_B=0
I_E=100µA, I_C=0
V_CB=35V, I_E=0
V_EB=6V, I_C=0
V_CE=1V, I_C=5mA
V_CE=1V, I_C=100mA
V_CE=1V, I_C=800mA
I_C=800mA, I_B=80mA
I_C=800mA, I_B=80mA
V_CE=1V, I_C=10mA
V_CB=10V, I_E=0
f=1MHz
f_T
Current Gain Bandwidth Product
V_CE=10V, I_C=50mA
Min.
40
25
6
45
85
40
100
Typ.
135
160
110
0.28
0.98
0.66
9.0
190
Max.
100
100
Units
V
V
V
nA
nA
300
0.5
V
1.2
V
1
V
pF
MHz
h_FE Classification
Classification
h_FE2
B
85 ~ 160
C
120 ~ 200
D
160 ~ 300
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002