SS22-S210 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Glass passivated junctions

Discrete POWER & Signal
Technologies
SS22 - S210
Features
• Glass passivated junctions.
• High current capability, low V_F.
• For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
0.083 (2.108)
0.075 (1.905)
2
0.185 (4.699)
0.160 (4.064)
1
0.155 (3.937)
0.130 (3.302)
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
0.220 (5.588)
0.200 (5.080)
0.096 (2.438)
0.083 (2.108)
2.0 Ampere Schottky Barrier Rectifiers
0.050 (1.270) 0.008 (0.203)
0.030 (0.762) 0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
PD
RθJA
Tstg
TJ
Average Rectified Current
.375 " lead length @ TA = 75°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient **
Storage Temperature Range
Operating Junction Temperature
2.0
50
1.3
13
75
-65 to +150
-65 to +125
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Units
A
A
W
mW/°C
°C/W
°C
°C
Electrical Characteristics T_A = 25°C unless otherwise noted
Parameter
22 23 24
Peak Repetitive Reverse Voltage
20 30 40
Maximum RMS Voltage
14 21 28
DC Reverse Voltage (Rated VR)
20 30 40
Maximum Reverse Current TA = 25°C
(Note 1) @ rated VR
TA = 100°C
Maximum Forward Voltage @ 2.0 A
500
Device
25 26
50 60
35 42
50 60
0.4
10
700
Note: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
28 29 210
80 90 100
56 64 80
80 90 100
850
Units
V
V
V
mA
mA
mV
©1998 Fairchild Semiconductor Corporation
SS22-S210, Rev. A