SM2G50US60 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – IGBT MODULE

SM2G50US60
Preliminary
IGBT MODULE
FEATURES
' High Speed Switching
' Low Conduction Loss
: V_CE(sat) = 2.1 V (typ)
' Fast & Soft Anti-Parallel FWD
& ' Short circuit rated
: Min 10uS at Tc=100
APPLICATIONS
Package code : 7-PM-AA
' General Purpose Inverters
' Welding Machine
' Induction Heating
' UPS , CVCF
' Robotics , Servo Controls
C2E1
E2
G2
E2
C1
E1
G1
Internal Circuit Diagram
 ABSOLUTE MAXIMUM RATINGS (Tc = 25 )
Symbol _{Characteristics}
Rating
V_CES
V_GES
I_C
I_{CM (1)}
I_F
I_FM
P_C
Tj
Tstg
Viso
Collector-Emitter Voltage
Gate-Emitter Voltage
& Collector Current @ Tc = 25
Pulsed Collector Current
& Diode Continuous Forward Current @ Tc = 25
Diode Maximum Forward Current
& Maximum Power Dissipation @Tc = 25
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage @ AC 1 min
Mounting Torque @ Power terminals screw :M5
Mounting screw :M5
600
20
50
100
50
100
250
-40 ~ 150
-40 ~ 125
2500
2.0
2.0
Notes: (1) Repetitive Rating : Pulse width Limited by Max.Junction Temperature
Units
V
V
A
A
A
A
W
&
&
V
N.m
N.m
Rev.B
©1999 Fairchild Semiconductor Corporation