SI9426DY Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Single N-Channel, 2.5V Specified MOSFET

January 2001
SI9426DY
Single N-Channel, 2.5V Specified MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s high cell density
DMOS technology process that has been especially
tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching
performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint package.
Applications
• DC/DC converter
• Load switch
Features
• 10.5 A, 20 V.
RDS(ON) = 13.5 mΩ @ VGS = 4.5 V
RDS(ON) = 16 mΩ @ VGS = 2.7 V
• High cell density for extremely low RDS(ON)
• High power and current handling capability in a widely
used surface mount package
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
9426
SI9426DY
13’’
2001 Fairchild Semiconductor International
5
6
7
8
Ratings
20
±8
10.5
30
2.5
1.2
1
-55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
SI9426DY Rev A (W)