SI9410DY Datasheet, PDF (1/3 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

September 1999
Si9410DY*
Single N-Channel Enhancement Mode MOSFET
General Description
This N-Channel Enhancement Mode MOSFET is
produced using Fairchild Semiconductor's advance
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
This device is well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• Battery switch
• Load switch
• Motor controls
Features
• 7.0 A, 30 V. R_DS(ON) = 0.030 Ω @ V_GS = 10 V
R_DS(ON) = 0.050 Ω @ V_GS = 4.5 V
• Low gate charge.
• Fast switching speed.
• High power and current handling capability.
SO-8
$EVROXWH 0D[LPXP 5DWLQJV $ ^{U Ã2Ã!$ƒ8ȁyr††Ã‚‡ur…v†rÁ‚‡rq}
6\PERO
3DUDPHWHU
W_'66
W_*66
D_'
Q_'
9…hvT‚ˆ…prÃW‚y‡htr
Bh‡rT‚ˆ…prÃW‚y‡htr
9…hvÃ8ˆ……r‡ Ã8‚‡vˆ‚ˆ†Ã
ÃQˆy†rq
Q‚r…Ã9v††vƒh‡v‚Ãs‚…ÃTvtyrÃPƒr…h‡v‚
I‚‡rà h
I‚‡rà h
I‚‡rà i
I‚‡rà p
U_-ÃU_67*
Pƒr…h‡vtÃhqÃT‡‚…htrÃEˆp‡v‚ÃUr€ƒr…h‡ˆ…rÃShtr
7KHUPDO &KDUDFWHULVWLFV
S_θ-$
S_θ-&
Uur…€hyÃSr†v†‡hprÃEˆp‡v‚‡‚6€ivr‡
Uur…€hyÃSr†v†‡hprÃEˆp‡v‚‡‚8h†r
I‚‡rà h
I‚‡rà 
3DFNDJH 2XWOLQHV DQG 2UGHULQJ ,QIRUPDWLRQ
'HYLFH 0DUNLQJ
'HYLFH
5HHO 6L]H
(# 
TD(# 9`
"¶¶
 9vrÃhqÀhˆshp‡ˆ…vtƂˆ…prƈiwrp‡Ã‡‚ÃpuhtrÐv‡u‚ˆ‡Ãƒ…v‚…Á‚‡vsvph‡v‚
©1999 Fairchild Semiconductor Corporation




5DWLQJV
"
±^!
&
"
!$
!
$$ǂÃ $
$
!$
7DSH :LGWK
!€€




8QLWV
W
W
6
X
°⁸
°^8X
°^8X
4XDQWLW\
!$ȁv‡†
Si9410DY Rev. C