SI4963DY Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench MOSFET

January 2001
Si4963DY
Dual P-Channel 2.5V Specified PowerTrench^® MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• –6.2 A, –20 V, RDS(ON) = 33 mΩ @ VGS = –4.5 V
RDS(ON) = 50 mΩ @ VGS = –2.5 V
• Extended VGSS range (±12V) for battery applications
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D^D1DD1
D^D2
D^D2
SO-8
Pin 1 SO-8
S1GG¹
S_S2G^{S2 S}
5
4
6
Q1
3
7
2
Q2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
V DSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
4963
Si4963DY
13’’
©2001 Fairchild Semiconductor International
Ratings
–20
±12
–6.2
–40
2
1.6
1
0.9
–55 to +175
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
Si4963DY Rev A(W)