SI4953DY Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual P-Channel Enhancement Mode MOSFET

June 1999
Si4953DY*
Dual P-Channel Enhancement Mode MOSFET
General Description
These P-Channel Enhancement Mode MOSFETs are
produced using Fairchild Semiconductor's advance
process that has been especially tailored to minimize on-
state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• Battery switch
• Load switch
• Motor controls
Features
• -4.9 A, -30 V. R_DS(on) = 0.053 Ω @ V_GS = -10 V
R_DS(on) = 0.095 Ω @ V_GS = -4.5 V.
• Low gate charge.
• Fast switching speed.
• High power and current handling capability.
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Si4953DY Rev. A