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SI4467DY Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET | |||
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January 2001
Si4467DY
P-Channel 1.8V Specified PowerTrenchï MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductorâs advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V â 8V).
Applications
⢠Power management
⢠Load switch
⢠Battery protection
Features
⢠â13.5 A, â20 V.
RDS(ON) = 8.5 m⦠@ VGS = â4.5 V
RDS(ON) = 10.5 m⦠@ VGS = â2.5 V
RDS(ON) = 14 m⦠@ VGS = â1.8 V
⢠Fast switching speed
⢠High performance trench technology for extremely
low RDS(ON)
⢠High current and power handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 SS SS SS GG
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
4467
Si4467DY
13ââ
Ratings
â20
±8
â13.5
â50
2.5
1.5
1.2
-55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
ï2001 Fairchild Semiconductor International
Si4467DY Rev A
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