SI4463DY Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET

January 2001
Si4463DY
P-Channel 2.5V Specified PowerTrench^ MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate PowerTrench process. It has been optimized for
power management applications with a wide range of
gate drive voltage (2.5V – 12V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –11.5 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V
RDS(ON) = 17.5 mΩ @ VGS = –2.5 V
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
4463
Si4463DY
13’’
5
6
7
8
Ratings
–20
± 12
–11.5
–50
2.5
1.2
1.0
–55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor International
Si4463DY Rev A(W)