SI4416DY Datasheet, PDF (1/3 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

August 1999
Si4416DY*
Single N-Channel MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
This device is well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• Battery switch
• Load switch
• Motor controls
Features
• 9 A, 30 V. R_DS(ON) = 0.018 Ω @ V_GS = 10 V
R_DS(ON) = 0.028 Ω @ V_GS = 4.5 V
• Low gate charge.
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• High power and current handling capability.
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Si4416DY Rev. A