SI3457DV Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Single P-Channel Logic Level PowerTrench MOSFET

April 2001
PRELIMINARY
Si3457DV
Single P-Channel Logic Level PowerTrench^ MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild’s advanced PowerTrench process. It
has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –4 A, –30 V.
RDS(ON) = 50 mΩ @ VGS = –10 V
RDS(ON) = 75 mΩ @ VGS = –4.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
S
D
D
SuperSOT ^TM-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.457
Si3457DV
7’’
Ratings
–30
±25
–4
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
Si3457DV Rev A (W)