SI3455DV Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Single P-Channel Logic Level PowerTrench MOSFET

April 2001
Si3455DV
Single P-Channel Logic Level PowerTrench^ MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild’s advanced PowerTrench process. It
has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –3.6 A, –30 V. R_DS(ON) = 75 mΩ @ V_GS = –10 V
R_DS(ON) = 125 mΩ @ V_GS = –4.5 V
• Low gate charge
• High performance trench technology for extremely
low R_DS(ON)
S
D
D
SuperSOT ^TM-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.455
Si3455DV
7’’
Ratings
–30
±20
–3.6
–10
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2003 Fairchild Semiconductor Corporation
Si3455DV Rev A1 (W)