SI3454DV Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

October 2001
Si3454DV
N-Channel PowerTrench^ MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 4.2 A, 30 V.
RDS(ON) = 65 mΩ @ VGS = 10 V
RDS(ON) = 95 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (9.4 nC typical)
• High power and current handling capability
S
D
D
SuperSOT ^TM-6
G
DD
1
6
2
5
3
4
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.454
Si3454DV
7’’
Ratings
30
±20
4.2
20
1.6
0.8
-55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
Si3454DV Rev A