SGW13N60UFD Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Ultra-Fast IGBT

SGW13N60UFD
Ultra-Fast IGBT
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : V_CE(sat) = 2.1 V @ I_C = 6.5A
• High input impedance
• CO-PAK, IGBT with FRD : t_rr = 37ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
C
G E ^D2-PAK
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
I_FM
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes from Case for 5 Seconds
@ T_C = 25°C
@ T_C = 100°C
@ T_C = 100°C
@ T_C = 25°C
@ T_C = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
G
E
SGW13N60UFD
600
± 20
13
6.5
52
8
56
60
25
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(DIODE)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount) ₍₂₎
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Typ.
--
--
--
Max.
2.0
3.5
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGW13N60UFD Rev. A1