SGS23N60UF Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Ultra-Fast IGBT

SGS23N60UF
Ultra-Fast IGBT
April 2001
IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : V_CE(sat) = 2.1 V @ I_C = 12A
• High input impedance
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
G
TO-220F
GCE
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ T_C = 25°C
@ T_C = 100°C
@ T_C = 25°C
@ T_C = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
E
SGS23N60UF
600
± 20
23
12
92
73
29
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
1.7
62.5
Units
V
V
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGS23N60UF Rev. A