SGS10N60RUFD Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Short Circuit Rated IGBT

SGS10N60RUFD
Short Circuit Rated IGBT
April 2001
IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10us @ T_C = 100°C, V_GE = 15V
• High speed switching
• Low saturation voltage : V_CE(sat) = 2.2 V @ I_C = 10A
• High input impedance
• CO-PAK, IGBT with FRD : t_rr = 42ns (typ.)
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
G
TO-220F
GCE
E
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
I_FM
T_SC
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ T_C = 25°C
@ T_C = 100°C
@ T_C = 100°C
@ T_C = 100°C
@ T_C = 25°C
@ T_C = 100°C
SGS10N60RUFD
600
± 20
16
10
30
12
92
10
55
22
-55 to +150
-55 to +150
300
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(DIODE)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
2.3
3.7
62.5
Units
V
V
A
A
A
A
A
µs
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGS10N60RUFD Rev. A