SGL60N90DG3 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – General Description

SGL60N90DG3
IGBT
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for induction heating applications.
Features
• High speed switching
• Low saturation voltage : V_CE(sat) = 2.0 V @ I_C = 60A
• High input impedance
• Built-in fast recovery diode
Applications
Home appliances, induction heaters, induction heating JARs, and microwave ovens.
C
GC E
TO-264
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ T_C = 25°C
@ T_C = 100°C
@ T_C = 100°C
@ T_C = 25°C
@ T_C = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(DIODE)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
SGL60N90DG3
900
± 25
60
42
120
15
180
72
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.69
2.08
25
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGL60N90DG3 Rev. A1