SGL50N60RUFDTU Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 600 V, 50 A Short Circuit Rated IGBT

April 2013
SGL50N60RUFD
600 V, 50 A Short Circuit Rated IGBT
General Description
Fairchild^®’s RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• 50 A, 600 V, T_C = 100°C
• Low Saturation Voltage: V_CE(sat) = 2.2 V @ I_C = 50 A
• Typical Fall Time. . . . . . . . . .261ns at T_J = 125°C
• High Speed Switching
• High Input Impedance
• Short Circuit Rating
Applications
Motor control, UPS, General Inverter.
C
G
GC E
TO-264
Absolute Maximum Ratings T_C = 25C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
I_FM
T_SC
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25C
@ T_C = 100C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ T_C = 100C
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 100C
@ T_C = 25C
@ T_C = 100C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
E
SGL50N60RUFD
600
 20
80
50
150
30
90
10
250
100
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
R_JC(IGBT)
R_JC(DIODE)
R_JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.5
1.0
25
Unit
V
V
A
A
A
A
A
us
W
W
C
C
C
Unit
C/W
C/W
C/W
©1999 Fairchild Semiconductor Corporation
1
SGL50N60RUFD Rev. C0
www.fairchildsemi.com