SGH40N60UFTU Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – SGH40N60UF 600 V PT IGBT

March 2013
SGH40N60UF
600 V PT IGBT
General Description
Fairchild^®’s UF series IGBTs provide low conduction and
switching losses. UF series is designed for the applications
such as general inverter and PFC where high speed
switching is required feature.
Features
• High Speed Switching
• Low Saturation Voltage: V_CE(sat) = 2.1 V @ I_C = 20 A
• High Input Impedance
Application
• General Inverter, PFC
C
G
GCE
TO-3P
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25°C
@ T_C = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25°C
@ T_C = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
E
SGH40N60UF
600
± 20
40
20
160
160
64
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.77
40
Unit
V
V
A
A
A
W
W
°C
°C
°C
Unit
°C/W
°C/W
©2009 Fairchild Semiconductor Corporation
1
SGH40N60UF Rev. C0
www.fairchildsemi.com