SGH13N60UFD Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – FEATURES

SGH13N60UFD
N-CHANNEL IGBT
FEATURES
TO-3P
* High Speed Switching
* Low Saturation Voltage
: V_CE(sat) = 1.95 V (@ Ic=6.5A)
* High Input Impedance
*CO-PAK, IGBT with FRD
: Trr = 37nS (typ.)
APPLICATIONS
* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast
ABSOLUTE MAXIMUM RATINGS
C
G
E
Symbol _{Characteristics}
Rating Units
V_CES
Collector-Emitter Voltage
600
V_GES
Gate-Emitter Voltage
±20
I_C
Collector Current @ Tc = 25°C
13
Collector Current @ Tc = 100°C
6.5
I_{CM (1)}
Pulsed Collector Current
52
I_F
Diode Continuous Forward Current @ Tc = 100°C
8
I_FM
Diode Maximum Forward Current
56
P_D
Maximum Power Dissipation @Tc = 25°C
60
Maximum Power Dissipation @Tc = 100°C
25
Tj
Operating Junction Temperature
-55 ~ 150
Tstg
Storage Temperature Range
-55 ~ 150
TL
Maximum Lead Temp. For Soldering
300
Purposes, 1/8” from case for 5 seconds
Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature
V
V
A
A
A
A
A
W
W
°C
°C
°C
Rev.B
©1999 Fairchild Semiconductor Corporation