SGF40N60 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – High Speed Switching

SGF40N60UFD
CO-PAK IGBT
FEATURES
TO-3PF
* High Speed Switching
* Low Saturation Voltage
: V_CE(sat) = 2.0 V (@ Ic=20A)
* High Input Impedance
*CO-PAK, IGBT with FRD
: Trr = 42nS (typ.)
APPLICATIONS
* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast
ABSOLUTE MAXIMUM RATINGS
C
G
E
Symbol _{Characteristics}
Rating Units
V_CES
Collector-Emitter Voltage
600
V
V_GES
Gate-Emitter Voltage
±20
V
I_C
Collector Current @ Tc = 25°C
40
A
Collector Current @ Tc = 100°C
20
A
I_{CM (1)}
Pulsed Collector Current
160
A
I_F
Diode Continuous Forward Current @ Tc = 100°C
15
A
I_FM
Diode Maximum Forward Current
160
A
P_D
Maximum Power Dissipation @Tc = 25°C
96
W
Maximum Power Dissipation @Tc = 100°C
38
W
Tj
Operating Junction Temperature
-55 ~ 150
°C
Tstg
Storage Temperature Range
-55 ~ 150
°C
TL
Maximum Lead Temp. For Soldering
300
°C
Purposes, 1/8” from case for 5 seconds
Notes:(1) Repetitive rating : Pulse width limited by max. junction temperature
Rev.B
©1999 Fairchild Semiconductor Corporation