SGF23N60UF Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Ultra-Fast IGBT

SGF23N60UF
Ultra-Fast IGBT
October 2001
IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF
series provides low conduction and switching losses.
UF series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Features
• High Speed Switching
• Low Saturation Voltage : V_CE(sat) = 2.1 V @ I_C = 12A
• High Input Impedance
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
C
G
GC E
TO-3PF
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25°C
@ T_C = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25°C
@ T_C = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
E
SGF23N60UF
600
± 20
23
12
92
75
30
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
1.6
40
Units
V
V
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGF23N60UF Rev. A