SGF15N90D Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – General Description

SGF15N90D
IGBT
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for induction heating applications.
Features
• High speed switching
• Low saturation voltage : V_CE(sat) = 2.0 V @ I_C = 15A
• High input impedance
• Built-in fast recovery diode
Applications
Home appliances, induction heaters, induction hea 1 ting JARs, and microwave ovens.
C
TO-3PF
C
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum PowerDissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes,1/8” from case for 5 seconds
@ T_C = 25°C
@ T_C = 100°C
@ T_C = 100°C
@ T_C = 25°C
@ T_C = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(DIODE)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
SGF15N90D
900
± 25
15
12
30
12
83
33
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
1.5
2.86
40
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGF15N90D Rev. A1