SFS2955 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
FEATURES
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! 175^oC Operating Temperature
! Extended Safe Operating Area
! Lower Leakage Current : 10 µA (Max.) @ V_DS = -60V
! Low R_DS(ON) : 0.22 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25^oC)
Continuous Drain Current (T_C=100^oC)
Drain Current-Pulsed
O¹
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O²
Avalanche Current
O¹
Repetitive Avalanche Energy
O¹
Peak Diode Recovery dv/dt
O³
Total Power Dissipation (T_C=25^oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
SFS2955
BV_DSS = -60 V
R_DS(on) = 0.3 Ω
I_D = -7.3 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
-60
-7.3
-5.1
-30
+_{_ 20}
137
-7.3
2.4
-5.5
24
0.19
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/^oC
o_C
Thermal Resistance
Symbol
R_θJC
R_θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
5.2
62.5
Units
o_C/W
Rev. A