SFP9Z14 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
SFP9Z14
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n 175^oC Opereting Temperature
n Extended Safe Operating Area
n Lower Leakage Current : -10 µA (Max.) @ V_DS = -60V
n Low R_DS(ON) : 0.362 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25^oC)
Continuous Drain Current (T_C=100^oC)
Drain Current-Pulsed
O¹
Gate-to-Source Voltage
O²
Single Pulsed Avalanche Energy
Avalanche Current
O¹
Repetitive Avalanche Energy
O¹
Peak Diode Recovery dv/dt
O³
Total Power Dissipation (T_C=25^oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
BV_DSS = -60 V
R_DS(on) = 0.5 Ω
I_D = -6.7 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
-60
-6.7
-4.7
-27
±30
115
-6.7
3.8
-5.5
38
0.25
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/^oC
o_C
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
3.95
--
62.5
Units
o_C/W
Rev. C