SFP9640L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
SFP9640L
FEATURES
❑ Avalanche Rugged Technology
❑ Rugged Gate Oxide Technology
❑ Lower Input Capacitances
❑ Improved Gate Charge
❑ Extended Safe Operating Area
❑ Lower Leakage Current : -10uA (Max.) @ V_DS= -200V
❑ Lower R_DS(ON) : 0.383 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25℃)
Continuous Drain Current (T_C=100℃)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
③
Total Power Dissipation (T_C=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BV_DSS = -200 V
R_DS(on) = 0.5Ω
I_D = -11 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
-200
-11
-7.5
-44
±20
806
-11
9.8
-5.0
98
0.78
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
Typ.
--
0.5
--
Max.
1.27
--
62.5
Units
℃/W
Rev. A