SFP9614 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
SFP9614
FEATURES
ν Avalanche Rugged Technology
ν Rugged Gate Oxide Technology
ν Lower Input Capacitance
ν Improved Gate Charge
ν Extended Safe Operating Area
ν Lower Leakage Current : -10 µA (Max.) @ V_DS = -250V
ν Low R_DS(ON) : 3.5 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25^oC)
Continuous Drain Current (T_C=100^oC)
Drain Current-Pulsed
O¹
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O²
Avalanche Current
O¹
Repetitive Avalanche Energy
O¹
Peak Diode Recovery dv/dt
O³
Total Power Dissipation (T_C=25^oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BV_DSS = -250 V
R_DS(on) = 4.0 Ω
I_D = -1. 6 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
-250
-1.6
-1.0
-6.5
+_{_ 30}
112
-1.6
2.0
-4.8
20
0.16
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/^oC
o_C
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
6.25
--
62.5
Units
o_C/W
Rev. B1
2001 Fairchild Semiconductor Corporation