SFH9250L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
SFH9250L
FEATURES
❑ Logic-Level Gate Drive
❑ Avalanche Rugged Technology
❑ Rugged Gate Oxide Technology
❑ Lower Input Capacitances
❑ Improved Gate Charge
❑ Extended Safe Operating Area
❑ Lower Leakage Current : 10uA (Max.) @ V_DS=-200V
❑ Lower R_DS(ON) : 0.175 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25 °C)
Continuous Drain Current (T_C=100 °C)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
③
Total Power Dissipation (T_C=25 °C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8″ from case for 5-seconds
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BV_DSS = -200 V
R_DS(on) = 0.23 Ω
I_D = -19.5 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Value
-200
-19.5
-12.3
-78
±20
990
-19.5
20.4
-5.0
204
1.63
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ °C
°C
Typ.
--
0.24
--
Max.
0.61
--
40
Units
°C /W
Rev. A