SFH154 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
SFH154
FEATURES
s Avalanche Rugged Technology
s Rugged Gate Oxide Technology
s Lower Input Capacitance
s Improved Gate Charge
s Extended Safe Operating Area
s 150^oC Operating Temperature
s Lower Leakage Current : 10 µA (Max.) @ V_DS = 150V
s Lower R_DS(ON) : 0.064 Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25^oC)
Continuous Drain Current (T_C=100^oC)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
③
Total Power Dissipation (T_C=25^oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BV_DSS = 150 V
R_DS(on) = 0.075 Ω
I_D = 34 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Value
150
34
21.6
136
±30
867
34
20.4
5.0
204
1.63
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/^oC
o_C
Typ.
--
0.24
--
Max.
0.61
--
40
Units
o_C/W
1