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SFF9250L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET | |||
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Advanced Power MOSFET
FEATURES
â Logic-Level Gate Drive
â Avalanche Rugged Technology
â Rugged Gate Oxide Technology
â Lower Input Capacitances
â Improved Gate Charge
â Extended Safe Operating Area
â Lower Leakage Current : 10uA (Max.) @ VDS=-200V
â Lower RDS(ON) : 0.175 ⦠(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 °C)
Continuous Drain Current (TC=100 °C)
Drain Current-Pulsed
â
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
â¡
Avalanche Current
â
Repetitive Avalanche Energy
â
Peak Diode Recovery dv/dt
â¢
Total Power Dissipation (TC=25 °C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8â³ from case for 5-seconds
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
SFF9250L
BVDSS = -200 V
RDS(on) = 0.23 â¦
ID = -12.6 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Value
-200
-12.6
-7.9
-50.4
±20
990
-12.6
20.4
-5.0
90
0.72
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ °C
°C
Typ.
--
--
Max.
0.61
40
Units
°C /W
Rev. A
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