SB29003 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – High Voltage Transistor

SB29003
High Voltage Transistor
1.Base
1 _SOT-223
Marking: 5463003
2.Collector 3.Emitter
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T_C = 25°C)
Junction Temperature
Storage Temperature
Value
500
400
6
300
2
150
-55 ~ 150
Electrical Characteristics T_C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
BV_CBO
BV_CER
BV_EBO
I_CBO
I_CES
I_EBO
h_FE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain *
V_CE(sat)
Collector-Emitter Saturation Voltage *
V_BE(sat)
C_ob
Base-Emitter Saturation Voltage *
Output Capatitance
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
I_C = 100µA, I_B = 0
I_C = 1mA, I_B = 0
I_E = 100µA, I_C = 0
V_CB = 400V, I_E = 0
V_CE = 400V, I_B = 0
V_EB = 4V, I_C = 0
V_CE = 10V, I_C = 1mA
V_CE = 10V, I_C = 10mA
V_CE = 10V, I_C = 50mA
V_CE = 10V, I_C = 100mA
I_C = 1mA, I_B = 0.1mA
I_C = 10mA, I_B = 1mA
I_C = 50mA, I_B = 5mA
I_C = 10mA, I_B = 1mA
V_CB = 20V, I_E = 0, f = 1MHz
Min.
500
400
6
40
50
45
40
Units
V
V
V
mA
W
°C
°C
Max
0.1
0.5
0.1
200
Units
V
V
V
µA
µA
µA
0.4
V
0.5
V
0.75
V
0.75
V
7
pF
©2004 Fairchild Semiconductor Corporation
1
SB29003 Rev. A
www.fairchildsemi.com