RURD4120S9A Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 4A, 1200V Ultrafast Diodes

Data Sheet
RURD4120S9A_F085
March 2009
4A, 1200V Ultrafast Diodes
The RURD4120S9A_F085 are ultrafast diodes with
soft recovery characteristics (t_rr < 70ns). They have low
forward voltage drop and are silicon nitride passivated
ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49036.
Ordering Information
PART NUMBER
RURD4120S9A_F085
PACKAGE
TO-252
BRAND
UR4120
Symbol
K
A
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <70ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175^oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
• Qualified to ACE Q101
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-252
CATHODE
ANODE
CATHODE
(FLANGE)
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_R
Average Rectified
(T_C = 152^oC)
Forward
Current
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. I_F(AV)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_STG, T_J
©2009 Fairchild Semiconductor Corporation
1
RURD4120S9A_F085
1200
1200
1200
4
UNITS
V
V
V
A
8
A
40
A
50
W
10
mJ
-65 to 175
o_C
RURD4120S9A_F085 Rev. A