RUR1S1560S Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 15A, 600V Ultrafast Diode

Data Sheet
RUR1S1560S
September 2002
[ /Title
(HUF7
6013P
3,
HUF76
013D3
S)
/Sub-
ject
(20A,
20V,
0.022
Ohm,
N-
Chan-
nel,
Logic
Level
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Inter-
sil,
Semi-
con-
ductor,
N-
Chan-
nel,
Logic
Level
UltraF
ET
Power
MOS-
15A, 600V Ultrafast Diode
The RUR1S1560S is an ultrafast diode (t_rr < 55ns) with soft
recovery characteristics. It has low forward voltage drop and
is of silicon nitride passivated ion-implanted, epitaxial planar
construction.
This device is intended for use as freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and ultrafast soft recovery minimizes ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistor.
Formerly developmental type TA9905.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RUR1S1560S
TO-263
RUR1560
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in tape and reel, i.e. RUR1S1560S9A.
Symbol
K
Features
• Ultrafast Recovery . . . . . . . . . . . . . . . . . . . . . . . . t_rr < 55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175^oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-263
CATHODE
(FLANGE)
CATHODE
ANODE
A
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
SYMBOL
PARAMETER
RUR1S1560S
UNITS
V_RRM
Peak Repetitive Reverse Voltage
V_RWM
Working Peak Reverse Voltage
V_R
DC Blocking Voltage
I_F(AV)
Average Rectified Forward Current
I_FRM
Repetitive Peak Surge Current (20kHz Square Wave)
I_FSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
P_D
Power Dissipation
E_AVL
Avalanche Energy (1A, 40mH)
T_J, T_STG
Operating and Storage Temperature
Maximum Temperature for Soldering
T_L
T_pkg
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
THERMAL SPECIFICATIONS
R_θJC
R_θJA
NOTES:
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
600
600
600
15
30
200
100
20
-55 to 175
300
260
1.5
60
V
V
V
A
A
A
W
mJ
o_C
o_C
o_C
o_C/W
o_C/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
RUR1S1560S Rev. A1